Samsung CIGW252010GLR47MNE

绕线鼓芯金属合成物470 nH

Overview

CIGT201610EH1R0MNE with pin details manufactured by SANSUNG. The CIGT201610EH1R0MNE is available in SMD Package, is part of the IC Chips, 1?H Unshielded Thin Film Inductor 4.1A 43 mOhm Max 0806 (2016 Metric), Inductor Power Thin Film 1uH 20% 1MHz Metal 4.1A 43mOhm DCR 0806.

CIGT252007LM2R2MNC with EDA / CAD Models manufactured by SAMSUNG. The CIGT252007LM2R2MNC is available in SMD Package, is part of the IC Chips, 2.2?H Unshielded Thin Film Inductor 1.6A 140 mOhm Max 1008 (2520 Metric), Metal Composite Power Inductor (Thin Film).

Features

CIGW Series
Tape & Reel (TR) Package
Drum Core, Wirewound Type
Metal Composite Material - Core
470 nH Inductance
±20% Tolerance
5.9 A Current Rating (Amps)
5.5A Current - Saturation (Isat)
Shielded Shielding
20mOhm Max DC Resistance (DCR)
1 MHz Inductance Frequency - Test
Surface Mount Mounting Type
1008 (2520 Metric) Package / Case
1008 (2520 Metric) Supplier Device Package
0.098" L x 0.079" W (2.50mm x 2.00mm) Size / Dimension
0.039" (1.00mm) Height - Seated (Max)