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RT9611AGQW

Richtek RT9611AGQW

高压侧或低压侧24.5V ~ 13.5V

比较
RT9611AGQW
IC BUCK MOSFET DRVR WDFN-8E
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比较

¥1.08

价格更新:一个月前

博斯克质量保证

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产品详情

Overview

The RT9611A/B is a high frequency, synchronous rectified, single phase dual MOSFET driver designed to adapt from normal MOSFET driving applications to high performance CPU VR driving capabilities.The RT9611A/B can be utilized under both VCC = 5V or VCC  = 12V applications. The RT9611A/B also builds in an internal power switch to replace external boot strap diode. The RT9611A/B can support switching frequency efficiently up to 500kHz. The RT9611A/B has the UGATE driving circuit and the LGATE driving circuit for synchronous rectified DC/DC converter applications. The driving rise/fall time capability is designed within 30ns and the shoot through protection mechanism is designed to prevent shoot through of high side and low side power MOSFETs. The RT9611A/B has PWM tri-state shut down and OD input shut down functions which can force driver output into high impedance. The difference of the RT9611AGQW and the RT9611B is the propagation delay, tUGATEpdh. The RT9611B has comparatively large tUGATEpdh than RT9611B. Hence, the RT9611AGQW is usually recommended to be utilized in performance oriented applications, such as high power density CPU VR or GPU VR. The RT9611A/B comes in a small footprint with 8-pin packages. The choice of packages type includes SOP-8, SOP-8 (Exposed Pad) and WDFN-8EL 3x3.

Features

Tape & Reel (TR) Package
Synchronous Channel Type
2 Number of Drivers
4.5V ~ 13.5V Voltage - Supply
15 V High Side Voltage - Max (Bootstrap)
12ns, 12ns Rise / Fall Time (Typ)
Surface Mount Mounting Type
产品属性
全选
包装: 卷带(TR)
部件状态: 在售
驱动配置: 高压侧或低压侧
通道类型: 同步
驱动器数: 2
栅极类型: N 沟道 MOSFET
电源电压: 4.5V ~ 13.5V
输入类型: 非反相
最大高压侧电压(自启动): 15 V
上升/下降时间(典型值): 12ns,12ns
工作温度: -40°C ~ 85°C(TA)
安装类型: 表面贴装型
封装/外壳: 8-WFDFN 裸露焊盘
供应商器件封装: 8-WDFN-EL (3x3)
可编程: 未验证
Richtek USA Inc.

Richtek USA Inc.

Richtek USA Inc.是一家领先的模拟IC设计公司,专注于提供高效能的电源管理解决方案。公司总部位于美国加利福尼亚州,产品广泛应用于消费电子、计算设备、通信和工业市场。

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