NXP Semiconductors BAS16,235

标准100 V215mA

Overview

The BAS16,215 is DIODE GEN PURP 100V 215MA SOT23, that includes Digi-ReelR Alternate Packaging Packaging, they are designed to operate with a TO-236-3, SC-59, SOT-23-3 Package Case, Mounting Type is shown on datasheet note for use in a Surface Mount, that offers Supplier Device Package features such as SOT-23 (TO-236AB), Speed is designed to work in Fast Recovery = 200mA (Io), as well as the Standard Diode Type, the device can also be used as 500nA @ 80V Current Reverse Leakage Vr. In addition, the Voltage Forward Vf Max If is 1.25V @ 150mA, the device is offered in 100V Voltage DC Reverse Vr Max, the device has a 215mA (DC) of Current Average Rectified Io, and Reverse Recovery Time trr is 4ns, and the Capacitance Vr F is 1.5pF @ 0V, 1MHz, it has an Operating Temperature Junction range of 150°C (Max).

BAS16 T/R with circuit diagram manufactured by PANJIT. The BAS16 T/R is available in SOT-23 Package, is part of the IC Chips.

Features

Bulk Package
Standard Technology
100 V Voltage - DC Reverse (Vr) (Max)
215mA Current - Average Rectified (Io)
1.25 V @ 150 mA Voltage - Forward (Vf) (Max) @ If
Fast Recovery =< 500ns, > 200mA (Io) Speed
4 ns Reverse Recovery Time (trr)
500 nA @ 80 V Current - Reverse Leakage @ Vr
1.5pF @ 0V, 1MHz Capacitance @ Vr, F
Surface Mount Mounting Type
150°C (Max) Operating Temperature - Junction