NS LM5112MY

低端13.5V ~ 14V

Overview

The LM5112MY device MOSFET gate driver provides high peak gate drive current in the tiny 6-pin WSON package (SOT-23 equivalent footprint) or an 8-pin exposed-pad MSOP package with improved power dissipation required for high frequency operation. The compound output driver stage includes MOS and bipolar transistors operating in parallel that together sink more than 7 A peak from capacitive loads. Combining the unique characteristics of MOS and bipolar devices reduces drive current variation with voltage and temperature. Undervoltage lockout protection is provided to prevent damage to the MOSFET due to insufficient gate turnon voltage. The LM5112MY device provides both inverting and non-inverting inputs to satisfy requirements for inverting and non-inverting gate drive with a single device type.

Features

Bulk Package
Embedded in the Tape & Reel (TR) package
1 drivers
Employing a gate type of N-Channel MOSFET
8 pins

Surface Mount Mounting Type

Applications

There are a lot of Texas Instruments
LM5112MY gate drivers applications.

• High-speed communications
• RGB applications
• Broadcast equipment
• Active filtering
• Head-up and Head mounted displays
• High current laser/LED systems
• LCD/LCoS/DLP portable and embedded pico projectors
• Multicolor LED/laser displays
• Smart Phones
• Portable Navigation Devices