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LM5111-3M

NS LM5111-3M

低端23.5V ~ 14V

比较
LM5111-3M
BUFFER/INVERTER BASED PERIPHERAL
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比较

¥4.85

价格更新:一个月前

博斯克质量保证

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产品详情

Overview

The LM5111-1M Dual Gate Driver replaces industry standard gate drivers with improved peakoutput current and efficiency. Each compound output driver stageincludes MOS and bipolar transistors operating in parallel that together sink more than 5-A peakfrom capacitive loads. Combining the unique characteristics of MOS and bipolar devices reducesdrive current variation with voltage and temperature. Undervoltage lockout protection is alsoprovided. The drivers can be operated in parallel with inputs and outputs connected to double thedrive current capability. This device is available in the SOIC package or the thermally enhancedMSOP-PowerPAD package.

Features

Bulk Package
Embedded in the Tube package
2 drivers
Employing a gate type of N-Channel MOSFET
8 pins
Quiescent current of 1mA

Surface Mount Mounting Type

Applications


There are a lot of Texas Instruments
LM5111-3M gate drivers applications.

  • RGB applications
  • Broadcast equipment
  • Active filtering
  • Head-up and Head mounted displays
  • High current laser/LED systems
  • LCD/LCoS/DLP portable and embedded pico projectors
  • Multicolor LED/laser displays
  • Smart Phones
  • Portable Navigation Devices
  • Portable Media Players
产品属性
全选
包装: 散装
部件状态: 在售
可编程: 未验证
驱动配置: 低端
通道类型: 独立式
驱动器数: 2
栅极类型: N 沟道 MOSFET
电源电压: 3.5V ~ 14V
逻辑低电平和高电平的电压电平: 0.8V,2.2V
电流 - 峰值输出(灌入,拉出): 3A,5A
输入类型: 反相,非反相
上升/下降时间(典型值): 14ns,12ns
工作温度: -40°C ~ 125°C(TJ)
安装类型: 表面贴装型
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商器件封装: 8-SOIC
National Semiconductor

National Semiconductor

National Semiconductor是一家著名的模拟半导体制造商,成立于1959年,总部位于美国加利福尼亚州圣克拉拉。2011年,National Semiconductor被德州仪器(Texas Instruments)收购,进一步增强了其在模拟半导体市场的领导地位。

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