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LM5110-1M/NOPB

NS LM5110-1M/NOPB

低端23.5V ~ 14V

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LM5110-1M/NOPB
LM5110 DUAL 5A COMPOUND GATE DRI
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¥9.92

价格更新:一个月前

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产品详情

Overview

The LM5110-1M/NOPB Dual Gate Driver replaces industry standard gate drivers with improved peak output current and efficiency. Each "compound" output driver stage includes MOS and bipolar transistors operating in parallel that together sink more than 5A peak from capacitive loads. Combining the unique characteristics of MOS and bipolar devices reduces drive current variation with voltage and temperature. Separate input and output ground pins provide Negative Drive Capability allowing the user to drive MOSFET gates with positive and negative VGS voltages. The gate driver control inputs are referenced to a dedicated input ground (IN_REF). The gate driver outputs swing from VCC to the output ground VEE which can be negative with respect to IN_REF. Undervoltage lockout protection and a shutdown input pin are also provided. The drivers can be operated in parallel with inputs and outputs connected to double the drive current capability. This device is available in the SOIC-8 and the thermally-enhanced WSON-10 packages.

The LM5110 Dual Gate Driver replaces industry standard gate drivers with improved peak output current and efficiency. Each "compound" output driver stage includes MOS and bipolar transistors operating in parallel that together sink more than 5A peak from capacitive loads. Combining the unique characteristics of MOS and bipolar devices reduces drive current variation with voltage and temperature. Separate input and output ground pins provide Negative Drive Capability allowing the user to drive MOSFET gates with positive and negative VGS voltages. The gate driver control inputs are referenced to a dedicated input ground (IN_REF). The gate driver outputs swing from VCC to the output ground VEE which can be negative with respect to IN_REF. Undervoltage lockout protection and a shutdown input pin are also provided. The drivers can be operated in parallel with inputs and outputs connected to double the drive current capability. This device is available in the SOIC-8 and the thermally-enhanced WSON-10 packages.

Features

Bulk Package
Embedded in the Tube package
Employing a gate type of N-Channel MOSFET
8 pins
Quiescent current of 1mA

Surface Mount Mounting Type

Applications


There are a lot of Texas Instruments
LM5110-1M/NOPB gate drivers applications.

  • Line drivers
  • Portable computers
  • High-speed communications
  • RGB applications
  • Broadcast equipment
  • Active filtering
  • Head-up and Head mounted displays
  • High current laser/LED systems
  • LCD/LCoS/DLP portable and embedded pico projectors
  • Multicolor LED/laser displays
产品属性
全选
包装: 散装
部件状态: 在售
可编程: 未验证
驱动配置: 低端
通道类型: 独立式
司机人数: 2
闸门类型: N 沟道 MOSFET
电源电压: 3.5V ~ 14V
逻辑低电平和高电平的电压电平: 0.8V,2.2V
电流 - 峰值输出(源,汇流排): 3A,5A
输入类型: 非反相
上升/下降时间(典型值): 14ns,12ns
工作温度: -40°C ~ 125°C(TJ)
安装类型: 表面贴装型
包装 / 盒: 8-SOIC(0.154",3.90mm 宽)
供应商 设备封装: 8-SOIC
National Semiconductor

National Semiconductor

National Semiconductor是一家著名的模拟半导体制造商,成立于1959年,总部位于美国加利福尼亚州圣克拉拉。2011年,National Semiconductor被德州仪器(Texas Instruments)收购,进一步增强了其在模拟半导体市场的领导地位。

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