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LM5104M

NS LM5104M

半桥29V ~ 14V

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LM5104M
HALF BRIDGE BASED PERIPHERAL DRI
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¥4.95

价格更新:一个月前

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产品详情

Overview

The LM5104M High-Voltage Gate Driver is designed to drive both the high-side and the low-side N-channel MOSFETs in a synchronous buck configuration. The floating high-side driver can work with supply voltages up to 100 V. The high-side and low-side gate drivers are controlled from a single input. Each change in state is controlled in an adaptive manner to prevent shoot-through issues. In addition to the adaptive transition timing, an additional delay time can be added, proportional to an external setting resistor. An integrated high-voltage diode is provided to charge high-side gate drive bootstrap capacitor. A robust level shifter operates at high speed while consuming low power and providing clean level transitions from the control logic to the high-side gate driver. Undervoltage lockout is provided on both the low-side and the high-side power rails. This device is available in the standard SOIC and the WSON packages.

Features

Bulk Package
Embedded in the Tube package
Employing a gate type of N-Channel MOSFET
8 pins
High-side voltage - Max (Bootstrap) of 118V
Quiescent current of 400μA

Surface Mount Mounting Type

Applications


There are a lot of Texas Instruments
LM5104M gate drivers applications.

  • Video amplifiers
  • PCMCIA applications
  • A/D drivers
  • Line drivers
  • Portable computers
  • High-speed communications
  • RGB applications
  • Broadcast equipment
  • Active filtering
  • Head-up and Head mounted displays
产品属性
全选
包装: 散装
部件状态: 在售
可编程: 未验证
驱动配置: 半桥
通道类型: 同步
驱动器数: 2
栅极类型: N 沟道 MOSFET
电源电压: 9V ~ 14V
逻辑低电平和高电平的电压电平: 0.8V,2.2V
电流 - 峰值输出(灌入,拉出): 1.6A,1.6A
输入类型: 反相,非反相
最大高压侧电压(自启动): 118 V
上升/下降时间(典型值): 600ns,600ns
工作温度: -40°C ~ 125°C(TJ)
安装类型: 表面贴装型
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商器件封装: 8-SOIC
National Semiconductor

National Semiconductor

National Semiconductor是一家著名的模拟半导体制造商,成立于1959年,总部位于美国加利福尼亚州圣克拉拉。2011年,National Semiconductor被德州仪器(Texas Instruments)收购,进一步增强了其在模拟半导体市场的领导地位。

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