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LM5102SD

NS LM5102SD

半桥29V ~ 14V

比较
LM5102SD
HALF BRIDGE BASED PERIPHERAL DRI
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¥10.70

价格更新:一个月前

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产品详情

Overview

The LM5102SD high-voltage gate driver is designed to drive both the high side and the low side N-Channel MOSFETs in a synchronous buck or a half bridge configuration. The floating high-side driver is capable of working with supply voltages up to 100 V. The outputs are independently controlled. The rising edge of each output can be independently delayed with a programming resistor. An integrated high voltage diode is provided to charge the high side gate drive bootstrap capacitor. A robust level shifter operates at high speed while consuming low power and providing clean level transitions from control logic to the high side gate driver. Undervoltage lockout is provided on both the low side and the high side power rails. This device is available in the standard VSSOP 10 pin and the WSON 10 pin packages.

Features

Bulk Package
Embedded in the Tape & Reel (TR) package
Employing a gate type of N-Channel MOSFET
10 pins
High-side voltage - Max (Bootstrap) of 118V
Quiescent current of 400μA

Surface Mount Mounting Type

Applications


There are a lot of Texas Instruments
LM5102SD gate drivers applications.

  • PCMCIA applications
  • A/D drivers
  • Line drivers
  • Portable computers
  • High-speed communications
  • RGB applications
  • Broadcast equipment
  • Active filtering
  • Head-up and Head mounted displays
  • High current laser/LED systems
产品属性
全选
包装: 散装
部件状态: 在售
可编程: 未验证
驱动配置: 半桥
通道类型: 独立式
驱动器数: 2
栅极类型: N 沟道 MOSFET
电源电压: 9V ~ 14V
逻辑低电平和高电平的电压电平: 0.8V,2.2V
电流 - 峰值输出(灌入,拉出): 1.6A,1.6A
输入类型: 非反相
最大高压侧电压(自启动): 118 V
上升/下降时间(典型值): 600ns,600ns
工作温度: -40°C ~ 125°C(TJ)
安装类型: 表面贴装型
封装/外壳: 10-WDFN 裸露焊盘
供应商器件封装: 10-WSON(4x4)
National Semiconductor

National Semiconductor

National Semiconductor是一家著名的模拟半导体制造商,成立于1959年,总部位于美国加利福尼亚州圣克拉拉。2011年,National Semiconductor被德州仪器(Texas Instruments)收购,进一步增强了其在模拟半导体市场的领导地位。

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