Micron MT46V64M8P-5B IT:J

64M x 8700 ps-40°C ~ 85°C（TA）

Overview

The MT46V64M8P-5B L IT F of DDR SDRAM uses a double data rate architecture to achieve high-speed operation. The double data rate architecture is essentially a 2n-prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. A single read or write access for the DDR SDRAM effectively consists of a single 2n-bit-wide, one-clockcycle data transfer at the internal DRAM core and two corresponding n-bit-wide, onehalf-clock-cycle data transfers at the I/O pins. A bidirectional data strobe (DQS) is transmitted externally, along with data, for use in data capture at the receiver. DQS is a strobe transmitted by the DDR SDRAM during READs and by the memory controller during WRITEs. DQS is edge-aligned with data for READs and center-aligned with data for WRITEs. The x16 offering has two data strobes, one for the lower byte and one for the upper byte. 

• Longer lead TSOP for improved reliability (OCPL)

Features

Box Package
Volatile Memory Type
DRAM Memory Format
512Mbit Memory Size
64M x 8 Memory Organization
Parallel Memory Interface
200 MHz Clock Frequency
15ns Write Cycle Time - Word, Page
700 ps Access Time
2.5V ~ 2.7V Voltage - Supply
Surface Mount Mounting Type