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MT41K512M16VRP-107 AAT:P

Micron MT41K512M16VRP-107 AAT:P

512M x 1620 ns-40°C ~ 105°C(TC)

比较
MT41K512M16VRP-107 AAT:P
DDR3 8G 512MX16 FBGA DDP
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¥124.80

价格更新:一个月前

博斯克质量保证

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产品详情

Overview

The MT41K512M16TNA-125:E TR is IC DDR3 SDRAM 8GBIT 800MHZ FBGA, that includes Tape & Reel (TR) Packaging, they are designed to operate with a 96-TFBGA Package Case, it has an Operating Temperature range of 0°C ~ 95°C (TC), that offers Interface features such as Parallel, Voltage Supply is designed to work in 1.283 V ~ 1.45 V, as well as the 96-FBGA (10x14) Supplier Device Package, the device can also be used as 8G (512M x 16) Memory Size. In addition, the Memory Type is DDR3L SDRAM, the device is offered in 800MHz Speed, the device has a RAM of Format Memory.

MT41K512M16TNA-125M:E with EDA / CAD Models manufactured by MICRON. The MT41K512M16TNA-125M:E is available in FBGA Package, is part of the Memory.

Features

Box Package
Volatile Memory Type
DRAM Memory Format
8Gbit Memory Size
512M x 16 Memory Organization
Parallel Memory Interface
933 MHz Clock Frequency
15ns Write Cycle Time - Word, Page
20 ns Access Time
1.283V ~ 1.45V Voltage - Supply
Surface Mount Mounting Type
产品属性
全选
型号系列: Automotive, AEC-Q100
包装: 盒
部件状态: 在售
可编程: 未验证
存储器类型: 易失
存储器格式: DRAM
技术: SDRAM - DDR3L
存储容量: 8Gb
存储器组织: 512M x 16
存储器接口: 并联
时钟频率: 933 MHz
单词、页面的写入周期时间: 15ns
访问时间: 20 ns
电源电压: 1.283V ~ 1.45V
工作温度: -40°C ~ 105°C(TC)
安装类型: 表面贴装型
封装/外壳: 96-TFBGA
供应商器件封装: 96-FBGA(8x14)
Micron Technology Inc.

Micron Technology Inc.

Micron Technology Inc.是一家全球领先的内存和存储解决方案供应商,成立于1978年,总部位于美国爱达荷州博伊西。Micron的产品广泛应用于计算机、移动设备、数据中心、汽车和工业市场。

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