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MT41K256M16HA-125 AAT:E

Micron MT41K256M16HA-125 AAT:E

256M x 1613.75 ns-40°C ~ 105°C(TC)

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MT41K256M16HA-125 AAT:E
IC DRAM 4GBIT PARALLEL 96FBGA
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¥198.00

价格更新:一个月前

博斯克质量保证

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产品详情

Overview

The MT41K256M16HA-125:E TR is IC DDR3 SDRAM 4GBIT 800MHZ FBGA, that includes Tape & Reel (TR) Packaging, they are designed to operate with a 96-TFBGA Package Case, it has an Operating Temperature range of 0°C ~ 95°C (TC), that offers Interface features such as Parallel, Voltage Supply is designed to work in 1.283 V ~ 1.45 V, as well as the 96-FBGA (9x14) Supplier Device Package, the device can also be used as 4G (256M x16) Memory Size. In addition, the Memory Type is DDR3L SDRAM, the device is offered in 800MHz Speed, the device has a RAM of Format Memory.

MT41K256M16HA-125:E with EDA / CAD Models manufactured by MICRON. The MT41K256M16HA-125:E is available in BGA Package, is part of the Memory, SDRAM - DDR3L Memory IC 4Gb (256M x 16) Parallel 800MHz 13.75ns 96-FBGA (9x14), DRAM Chip DDR3L SDRAM 4Gbit 256Mx16 1.35V 96-Pin FBGA.

Features

Tray Package
Volatile Memory Type
DRAM Memory Format
4Gbit Memory Size
256M x 16 Memory Organization
Parallel Memory Interface
800 MHz Clock Frequency
13.75 ns Access Time
1.283V ~ 1.45V Voltage - Supply
Surface Mount Mounting Type
产品属性
全选
型号系列: Automotive, AEC-Q100
包装: 托盘
部件状态: 停产
可编程: 未验证
存储器类型: 易失
存储器格式: DRAM
技术: SDRAM - DDR3L
存储容量: 4Gb
存储器组织: 256M x 16
存储器接口: 并联
时钟频率: 800 MHz
访问时间: 13.75 ns
电源电压: 1.283V ~ 1.45V
工作温度: -40°C ~ 105°C(TC)
安装类型: 表面贴装型
封装/外壳: 96-TFBGA
供应商器件封装: 96-FBGA(9x14)
Micron Technology Inc.

Micron Technology Inc.

Micron Technology Inc.是一家全球领先的内存和存储解决方案供应商,成立于1978年,总部位于美国爱达荷州博伊西。Micron的产品广泛应用于计算机、移动设备、数据中心、汽车和工业市场。

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