Micron MT29F4G16ABBDAH4:D

256M x 160°C ~ 70°C（TA）

Overview

Features · Open NAND Flash Interface(ONFI) 1.0-compliant1 · Single-level cell(SLC) technology · Organization -Page size x8:2112 bytes(2048+64 bytes)-Page sizex16:1056 words(1024+32 words) -Block size:64 pages(128K+4K bytes) -Plane size:2 planes x 2048 blocks per plane-Device size:4Gb:4096 blocks;8Gb:8192 blocks 16Gb:16,384 blocks · Asynchronous I/O performance -tRC/tWC:20ns (3.3V),25ns(1.8V) · Array performance -Read page:25us3 -Program page:200us(TYP:1.8V3.3V)3 -Erase block:700us(TYP) · Command set: ONFI NAND Flash Protocol · Advanced command set -Program page cache mode4 -Read page cache mode 4 -One-time programmable(OTP) mode -Two-plane commands 4 -Interleaved die(LUN) operations -Read unique ID -Block lock(1.8Vonly) -Internal data move · Operation status byte provides software method for detecting -Operation completion -Pass/fail condition -Write-protect status · Ready/Busy#(R/B#) signal provides a hardware method of detecting operation completion · WP# signal: Write protect entire device · First block(block address 00h) is valid when shipped from factory with ECC. For minimum required ECC, see Error Management. · Block 0 requires 1-bit ECC if PROGRAM/ERASE cycles are less than 1000 · RESET(FFh) required as first command after power-on · Alternate method of device initialization(Nand_In it) after power up(contact factory) · Internal data move operations supported within the plane from which data is read · Quality and reliability-Data retention:10 years -Endurance:100,000 PROGRAM/ERASE cycles · Operating voltage range -Vcc:2.7-3.6V -Voc:1.7-1.95V · Operating temperature: -Commercial:0℃ to+70℃ -Industrial(IT):-400C to+85C · Package -48-pin TSOP type 1, CPL2 -63-ball VFBGA

Features

Bulk Package
FLASH Memory Format
4Gbit Memory Size
256M x 16 Memory Organization
Parallel Memory Interface
1.7V ~ 1.95V Voltage - Supply
0°C ~ 70°C (TA) Operating Temperature
Surface Mount Mounting Type