Micron MT29F4G08ABBDAH4-AITX:D

512M x 8-40°C ~ 85°C（TA）

Overview

Micron NAND Flash devices include an asynchronous data interface for high-performance I/O operations. These devices use a highly multiplexed 8-bit bus (I/Ox) to transfer commands, address, and data. There are five control signals used to implement the asynchronous data interface: CE#, CLE, ALE, WE#, and RE#. Additional signals control hardware write protection and monitor device status (R/B#).This hardware interface creates a low pin-count device with a standard pinout that remains the same from one density to another, enabling future upgrades to higher densi ties with no board redesign.A target is the unit of memory accessed by a chip enable signal. A target contains one or more NAND Flash die. A NAND Flash die is the minimum unit that can independently execute commands and report status. A NAND Flash die, in the ONFI specification, is referred to as a logical unit (LUN). There is at least one NAND Flash die per chip enable signal. For further details, see Device and Array Organization.This device has an internal 4-bit ECC that can be enabled using the GET/SET features.See Internal ECC and Spare Area Mapping for ECC for more information.

• Open NAND Flash Interface (ONFI) 1.0-compliant1• Single-level cell (SLC) technology• Organization – Page size x8: 2112 bytes (2048 + 64 bytes) – Page size x16: 1056 words (1024 + 32 words) – Block size: 64 pages (128K + 4K bytes) – Plane size: 2 planes x 2048 blocks per plane – Device size: 4Gb: 4096 blocks; 8Gb: 8192 blocks 16Gb: 16,384 blocks• Asynchronous I/O performance – tRC/tWC: 20ns (3.3V), 25ns (1.8V)• Array performance – Read page: 25µs 3 – Program page: 200µs (TYP: 1.8V, 3.3V)3 – Erase block: 700µs (TYP)• Command set: ONFI NAND Flash Protocol• Advanced command set – Program page cache mode4 – Read page cache mode 4 – One-time programmable (OTP) mode – Two-plane commands 4 – Interleaved die (LUN) operations – Read unique ID – Block lock (1.8V only) – Internal data move• Operation status byte provides software method for detecting – Operation completion – Pass/fail condition – Write-protect status• Ready/Busy# (R/B#) signal provides a hardware method of detecting operation completion• WP# signal: Write protect entire device• First block (block address 00h) is valid when ship ped from factory with ECC. For minimum required ECC, see Error Management.• Block 0 requires 1-bit ECC if PROGRAM/ERASE cycles are less than 1000• RESET (FFh) required as first command after power-on• Alternate method of device initialization (Nand_In it) after power up (contact factory)• Internal data move operations supported within the plane from which data is read• Quality and reliability – Data retention: 10 years – Endurance: 100,000 PROGRAM/ERASE cycles• Operating voltage range – VCC: 2.7–3.6V – VCC: 1.7–1.95V• Operating temperature: – Commercial: 0°C to +70°C – Industrial (IT): –40ºC to +85ºC• Package – 48-pin TSOP type 1, CPL2 – 63-ball VFBGA

Features

Tray Package
FLASH Memory Format
4Gbit Memory Size
512M x 8 Memory Organization
Parallel Memory Interface
1.7V ~ 1.95V Voltage - Supply
Surface Mount Mounting Type