Micron MT28GU256AAA1EGC-0SIT

32M x 896 ns-40°C ~ 85°C（TA）

Overview

  -20us(TYP) program/erase suspend

General Description Micron's 65nm device is the latest generation of StrataFlash® memory featuring flexible, multiple-partition, dual-operation architecture. The device provides high-performance, asynchronous read mode and synchronous-burst read mode using 1.8V low-voltage, multilevel cell (MLC) technology. The multiple-partition architecture enables background programming or erasing to occur in one partition while code execution or data reads take place in another partition. This dual-operation architecture also allows two processors to interleave code operations while PROGRAM and ERASE operations take place in the background. The multiple partitions allow flexibility for system designers to choose the size of the code and data segments. The device is manufactured using 65nm process technologies and is available in industry-standard chip scale packaging.

Features

Tray Package
FLASH Memory Format
256Mbit Memory Size
32M x 8 Memory Organization
Parallel Memory Interface
133 MHz Clock Frequency
96 ns Access Time
1.7V ~ 2V Voltage - Supply
Surface Mount Mounting Type