MACOM MA4SW510B-1

通用反射

Overview

The MA4SW510B-1 device is a SP5T broadband switchwith integrated bias network utilizing MACOM'sHMICT™(Heterolithic Microwave Integrated Circuit)process, US Patent 5,268,310. This process allows theincorporation of silicon pedestals that form series andshunt diodes or vias by imbedding them in low loss,low dispersion glass. By using small spacing betweenelements, this combination of silicon and glass givesHMIC devices low loss and high isolation performancewith exceptional repeatability through low millimeterfrequencies. Large bond pads facilitate the use of lowinductance ribbon bonds, while gold backsidemetallization allows for manual or automatic chipbonding via 80/20 - Au/Sn, 62/36/2 - Sn/Pb/Ag soldersor electrically conductive silver epoxy.These high performance switches are suitable for usein multi-band ECM, Radar, and instrumentation controlcircuits where high isolation to insertion loss ratios arerequired. With a standard +5V/-5V, TTL controlled PINdiode driver, 80nS switching speeds can be achieved.

Features

HMIC™ Series
Bulk package
General Purpose RF Type

Die Supplier Device Package

Applications

There are a lot of M/A-Com Technology Solutions
MA4SW510B-1 RF Switches applications.

• Antenna diversity switching
• Cellular/PCS Base Stations
• ISM
• Wireless Local Loop
• Smartphones
• Tablets
• Mobile devices
• Smart metering
• Cellular infrastructures
• LTE diversity applications