MACOM MA4SW210B-1

通用反射

Overview

The MA4SW210B-1 and MA4SW310B-1 devices are SP2T and SP3T broadbandswitches with an integrated bias networks utilizing MACOM's HMIC™ (Heterolithic Microwave Integrated Circuit) process, US Patent 5,268,310. This process allows the incorporation of silicon pedestals that form series and shunt diodes or vias by imbedding them in low loss, low dispersion glass. By using small spacing between circuit elements, this combination of silicon and glass gives HMIC™ devices low loss and high isolation performance with exceptional repeatability through low millimeter frequencies. Large bond pads facilitate the use of low inductance ribbon bonds, while full area, gold, backside metallization allows for manual orautomatic chip bonding via 80Au/20Sn solders or electrically conductive silver epoxy.

Features

HMIC™ Series
Bulk package
USABLE TO 26 GHZ, HIGH ISOLATION
General Purpose RF Type

Die Supplier Device Package

Applications

There are a lot of M/A-Com Technology Solutions
MA4SW210B-1 RF Switches applications.

• Cellular/PCS Base Stations
• ISM
• Wireless Local Loop
• Smartphones
• Tablets
• Mobile devices
• Smart metering
• Cellular infrastructures
• LTE diversity applications
• WCDMA diversity applications