MACOM MA4E1310

肖特基 - 单7V0.45pF @ 0V, 1MHz9Ohm @ 10.5mA, 1MHz-65°C ~ 125°C

Overview

MACOM's MA4E1310 is a gallium arsenide flipchip Schottky barrier diode. This diode is fabricatedon a OMCVD epitaxial wafer using a processdesigned for high device uniformity and extremelylow parasitics. This device is fully passivatedwith silicon nitride and has an additionallayer of polyimide for scratch protection. Theprotective coatings prevent damage to the junctionduring automated or manual handling. Theflip chip configuration is suitable for pick andplace insertion.The high cutoff frequency of this diode allowsuse through millimeter wave frequencies. Typicalapplications include single and double balancedmixers in PCN transceivers and radios,police radar detectors, automotive radar detectors,etc. This device can be used through 110GHz.

Features

Bulk Package
7V Voltage - Peak Reverse (Max)
0.45pF @ 0V, 1MHz Capacitance @ Vr, F
9Ohm @ 10.5mA, 1MHz Resistance @ If, F
Die Package / Case
Chip Supplier Device Package