MACOM MA4AGSW1

通用反射

Overview

MACOM’s MA4AGSW1 is an Aluminum-Gallium-Arsenide, single pole, single throw (SPST),PIN diode switch. The switch features enhanced Al-GaAs anodes which are formed using MACOM’s patented hetero-junction technology. This technology produces a switch with less loss than conventional AlGaAs processes. As much as a 0.3dB reduction in insertion loss can be realized at50GHz. The fabrication process is designed for highdevice uniformity and extremely low parasitics. Thediodes themselves exhibit low series resistance, lowcapacitance, and fast switching speed. They are fullypassivated with silicon nitride and have an additionalpolymer layer for scratch protection. The protectivecoating prevents damage to the diode junction andanode air-bridges during handling and assembly. Offchip bias circuitry is required.The high electron mobility of AlGaAs and the lowcapacitance of the PIN diodes makes this switchideal for fast switching, high frequency, multi-throwswitch designs. These versatile AlGaAs PINswitches can be used in a variety of microwaveapplications such as switching arrays for radarsystems, radiometers, test equipment and othermulti-assembly components.

Features

Tray Package
Bulk package
2 pins
IT CAN ALSO OPERATE AT 50 TO 70000 MHZ
General Purpose RF Type

Die Supplier Device Package

Applications

There are a lot of M/A-Com Technology Solutions
MA4AGSW1 RF Switches applications.

• IF switching
• Tuner modules
• Antenna diversity switching
• Cellular/PCS Base Stations
• ISM
• Wireless Local Loop
• Smartphones
• Tablets
• Mobile devices
• Smart metering