MACOM MA4AGBLP912

PIN - 单50V40 mA0.03pF @ 5V, 1MHz4.9Ohm @ 20mA, 1GHz-65°C ~ 125°C（TJ）

Overview

MACOM's MA4AGBLP912 is an Aluminum-Gallium-Arsenide anode enhanced, beam lead PIN diode. AlGaAs anodes, which utilize MACOM's patented hetero-junction technology, produce less diode “On” resistance than conventional GaAs or silicon devices. This device is fabricated in a OMCVD system using a process optimized for high device uniformity and extremely low parasitics. The result is a diode with low series resistance, 4, low capacitance, 28fF, and an extremely fast switching speed of 5nS. It is fully passivated with silicon nitride and has an additional polymer coating for scratch protection. The protective coating prevents damage to the junction and the anode air bridges during handling and assembly.The ultra low capacitance of the MA4AGBLP912 device makes it ideally suited for use up to 40GHz when used in a shunt configuration. The low RC product and low profile of the beamlead PIN diode allows for use in microwave switch designs, where low insertion loss andhigh isolation are required. The operating bias conditions of +10mA for the low loss state, and 0V, for the isolation state permits the use of a simple +5V TTLgate driver. AlGaAs, beamlead diodes, can be used inswitching arrays on radar systems, high speed ECMcircuits, optical switching networks, instrumentation, andother wideband multi-throw switch assemblies.

Features

Tray Package
at its lowest breakdown voltage of 50V

4.9Ohm @ 20mA, 1GHz Resistance @ If, F

Applications

There are a lot of M/A-Com Technology Solutions
MA4AGBLP912 applications of RF diodes.

• Ultra high-speed switching
• Clamping circuits
• Diode ring mixer
• RF detector
• RF voltage doubler
• Wearables
• Smart metering
• Set top boxes
• RF attenuators and switches
• Low-loss, high-power limiters