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IS62WV51216BLL-55TLI

ISSI IS62WV51216BLL-55TLI

512K x 1655 ns-40°C ~ 85°C(TA)

比较
IS62WV51216BLL-55TLI
IC SRAM 8MBIT PARALLEL 44TSOP II
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¥17.84

价格更新:一个月前

博斯克质量保证

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产品详情

Overview

The IS62WV51216BLL-55TLI is a 8Mb high speed static RAM organized as 512K words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices. When CS1 is HIGH (deselected) or when CS2 is LOW (deselected) or when CS1 is LOW, CS2 is HIGH and both LB and UB are HIGH, the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs. The active LOW Write Enable (WE) controls both writing and reading of the memory. A data byte allows Upper Byte (UB) and Lower Byte (LB) access.

Features

Volatile Memory Type
Package / Case: 44-TSOP (0.400, 10.16mm Width)
44 Pins
Operating Supply Voltage:3.3V
I/O Type: COMMON

Surface Mount Mounting Type

Applications


There are a lot of ISSI, Integrated Silicon Solution Inc
IS62WV51216BLL-55TLI Memory applications.

  • telecommunications
  • workstations,
  • DVD disk buffer
  • data buffer
  • nonvolatile BIOS memory
  • Camcorders
  • embedded logic
  • eDRAM
  • graphics card
  • hard disk drive (HDD)
产品属性
全选
包装: 托盘
部件状态: 在售
可编程: 未验证
存储器类型: 易失
存储器格式: SRAM
技术: SRAM - 异步
存储容量: 8Mb
存储器组织: 512K x 16
存储器接口: 并联
单词、页面的写入周期时间: 55ns
访问时间: 55 ns
电源电压: 2.5V ~ 3.6V
工作温度: -40°C ~ 85°C(TA)
安装类型: 表面贴装型
封装/外壳: 44-TSOP(0.400",10.16mm 宽)
供应商器件封装: 44-TSOP II
ISSI, Integrated Silicon Solution Inc.

ISSI, Integrated Silicon Solution Inc.

Integrated Silicon Solution Inc.(ISSI)是一家专注于高性能存储器和模拟IC的公司,成立于1988年,总部位于美国加利福尼亚州圣克拉拉。ISSI的产品广泛应用于汽车、工业、医疗和通信市场。

实时新闻

博斯克数字

收入: 85M

2022年的收入为8500万美元,与2021年增长63%。

国家: 105

博斯克服务全球105个国家的客户。

配件发货: 25M+

我们在过去的五年中发货了2.5亿个配件,比前五年增长148%。

制造商: 950

2022年,博斯克从近950个制造商售卖了配件。

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