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IS61QDB22M18-250M3I

ISSI IS61QDB22M18-250M3I

2M x 181.35 ns-40°C ~ 85°C(TA)

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IS61QDB22M18-250M3I
IC SRAM 36MBIT PARALLEL 165LFBGA
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¥163.80

价格更新:一个月前

博斯克质量保证

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产品详情

Overview

The IS61QDB21M36-250M3L is IC SRAM 36MB 250MHZ 165BGA, that includes IS61QDB21M36 Series, they are designed to operate with a Synchronous Type, Packaging is shown on datasheet note for use in a Tray, that offers Mounting Style features such as SMD/SMT, Package Case is designed to work in 165-LBGA, it has an Operating Temperature range of 0°C ~ 70°C (TA), the device can also be used as Parallel Interface. In addition, the Voltage Supply is 1.71 V ~ 1.89 V, the device is offered in 165-LFBGA (15x17) Supplier Device Package, the device has a 36M (1M x 36) of Memory Size, and Memory Type is SRAM - Synchronous, QUAD, and the Speed is 250MHz, and Data Rate is DDR, and the Access Time is 0.45 ns, and Format Memory is RAM, it has an Maximum Operating Temperature range of + 70 C, it has an Minimum Operating Temperature range of 0 C, and the Interface Type is Parallel, and Organization is 1 M x 36, and the Supply Current Max is 800 mA, and Supply Voltage Max is 1.9 V, and the Supply Voltage Min is 1.7 V, and Maximum Clock Frequency is 250 MHz.

IS61QDB22M18-250M3 with EDA / CAD Models manufactured by ISSI. The IS61QDB22M18-250M3 is available in BGA Package, is part of the Memory, SRAM - Synchronous, QUAD Memory IC 36Mb (2M x 18) Parallel 250MHz 7.5ns 165-LFBGA (15x17), SRAM 36Mb 2Mbx18 QUAD Sync SRAM.

Features

Tray Package
Volatile Memory Type
SRAM Memory Format
36Mbit Memory Size
2M x 18 Memory Organization
Parallel Memory Interface
250 MHz Clock Frequency
1.35 ns Access Time
1.71V ~ 1.89V Voltage - Supply
Surface Mount Mounting Type
产品属性
全选
包装: 托盘
部件状态: 停产
可编程: 未验证
存储器类型: 易失
存储器格式: SRAM
技术: SRAM - 同步,QUAD
存储容量: 36Mb
存储器组织: 2M x 18
存储器接口: 并联
时钟频率: 250 MHz
访问时间: 1.35 ns
电源电压: 1.71V ~ 1.89V
工作温度: -40°C ~ 85°C(TA)
安装类型: 表面贴装型
封装/外壳: 165-LBGA
供应商器件封装: 165-LFBGA(15x17)
ISSI, Integrated Silicon Solution Inc.

ISSI, Integrated Silicon Solution Inc.

Integrated Silicon Solution Inc.(ISSI)是一家专注于高性能存储器和模拟IC的公司,成立于1988年,总部位于美国加利福尼亚州圣克拉拉。ISSI的产品广泛应用于汽车、工业、医疗和通信市场。

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