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IS43DR16320E-25DBLI-TR

ISSI IS43DR16320E-25DBLI-TR

32M x 16400 ps-40°C ~ 85°C(TA)

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IS43DR16320E-25DBLI-TR
IC DRAM 512MBIT PAR 84TWBGA
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¥15.08

价格更新:一个月前

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产品详情

Overview

The IS43DR16320D-3DBLI-TR is IC DDR2 512M 333MHZ 84BGA, that includes Tape & Reel (TR) Packaging, they are designed to operate with a 84-TFBGA Package Case, it has an Operating Temperature range of -40°C ~ 85°C (TA), that offers Interface features such as Parallel, Voltage Supply is designed to work in 1.7 V ~ 1.9 V, as well as the 84-TWBGA (8x12.5) Supplier Device Package, the device can also be used as 512M (32M x 16) Memory Size. In addition, the Memory Type is DDR2 SDRAM, the device is offered in 333MHz Speed, the device has a RAM of Format Memory.

The IS43DR16320D-3DBL is IC DDR2 512M 333MHZ 84BGA, that includes Tray Packaging, they are designed to operate with a RAM Format Memory, Interface is shown on datasheet note for use in a Parallel, that offers Memory Type features such as DDR2 SDRAM, Supplier Device Package is designed to work in 84-TWBGA (8x12.5), as well as the 84-TFBGA Package Case, the device can also be used as 512M (32M x 16) Memory Size. In addition, the Speed is 333MHz, the device is offered in 1.7 V ~ 1.9 V Voltage Supply, it has an Operating Temperature range of 0°C ~ 70°C (TA).

Features

Tape & Reel (TR) Package
Volatile Memory Type
DRAM Memory Format
512Mbit Memory Size
32M x 16 Memory Organization
Parallel Memory Interface
400 MHz Clock Frequency
15ns Write Cycle Time - Word, Page
400 ps Access Time
1.7V ~ 1.9V Voltage - Supply
Surface Mount Mounting Type
产品属性
全选
包装: 卷带(TR)
部件状态: 在售
可编程: 未验证
存储器类型: 易失
存储器格式: DRAM
技术: SDRAM - DDR2
存储容量: 512Mb
存储器组织: 32M x 16
存储器接口: 并联
时钟频率: 400 MHz
单词、页面的写入周期时间: 15ns
访问时间: 400 ps
电源电压: 1.7V ~ 1.9V
工作温度: -40°C ~ 85°C(TA)
安装类型: 表面贴装型
封装/外壳: 84-TFBGA
供应商器件封装: 84-TWBGA(8x12.5)
ISSI, Integrated Silicon Solution Inc.

ISSI, Integrated Silicon Solution Inc.

Integrated Silicon Solution Inc.(ISSI)是一家专注于高性能存储器和模拟IC的公司,成立于1988年,总部位于美国加利福尼亚州圣克拉拉。ISSI的产品广泛应用于汽车、工业、医疗和通信市场。

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