IR IRLR2908TRLPBF

N 通道80 V30A（Tc）2.5V @ 250µA120W（Tc）-55°C ~ 175°C（TJ）表面贴装型

Overview

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Features

• Available in the D-Pak package

• Extremely low on-resistance per silicon area

• Fast switching speed

• Improved repetitive avalanche rating

• Operating junction temperature of +175 °C

Applications

• Synchronous rectification

• High-frequency switching applications