IR IR2105S

半桥210V ~ 20V

Overview

Description The IR2105S is a high voltage, high speed power MOSFET and IGBT driver with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL outputs. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates from 10 to 600 volts. Features • Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune • Gate drive supply range from 10 to 20V • Undervoltage lockout • 5V Schmitt-triggered input logic • Cross-conduction prevention logic • Internally set deadtime • High side output in phase with input • Match propagation delay for both channels

Features

Tube Package
Embedded in the Tube package
2 drivers
Employing a gate type of IGBT, N-Channel MOSFET
High-side voltage - Max (Bootstrap) of 600V

Surface Mount Mounting Type

Applications

There are a lot of Infineon Technologies
IR2105S gate drivers applications.

• High-speed communications
• RGB applications
• Broadcast equipment
• Active filtering
• Head-up and Head mounted displays
• High current laser/LED systems
• LCD/LCoS/DLP portable and embedded pico projectors
• Multicolor LED/laser displays
• Smart Phones
• Portable Navigation Devices