IR AUIRFR3710ZTRL

N 通道100 V42A（Tc）4V @ 250µA140W（Tc）-55°C ~ 175°C（TJ）表面贴装型

Overview

The AUIRFR3710Z is MOSFET AUTO 100V 1 N-CH HEXFET 18mOhms, that includes Tube Packaging, they are designed to operate with a 0.139332 oz Unit Weight, Mounting Style is shown on datasheet note for use in a SMD/SMT, that offers Package Case features such as TO-252-3, Technology is designed to work in Si, as well as the 1 Channel Number of Channels, the device can also be used as Single Configuration. In addition, the Transistor Type is 1 N-Channel, the device is offered in 140 W Pd Power Dissipation, it has an Minimum Operating Temperature range of - 55 C, and Fall Time is 42 ns, and the Rise Time is 43 ns, and Vgs Gate Source Voltage is 20 V, and the Id Continuous Drain Current is 56 A, and Vds Drain Source Breakdown Voltage is 100 V, and the Rds On Drain Source Resistance is 18 mOhms, and Transistor Polarity is N-Channel, and the Typical Turn Off Delay Time is 53 ns, and Typical Turn On Delay Time is 14 ns, and the Qg Gate Charge is 69 nC, and Channel Mode is Enhancement.

The AUIRFR3710ZTR is Trans MOSFET N-CH Si 100V 56A Automotive 3-Pin(2+Tab) DPAK T/R manufactured by IR. The AUIRFR3710ZTR is available in TO-252 Package, is part of the IC Chips, , and with support for Trans MOSFET N-CH Si 100V 56A Automotive 3-Pin(2+Tab) DPAK T/R.

Features

HEXFET® Series
Bulk Package
MOSFET (Metal Oxide) Technology
100 V Drain to Source Voltage (Vdss)
42A (Tc) Current - Continuous Drain (Id) @ 25°C
18mOhm @ 33A, 10V Rds On (Max) @ Id, Vgs
4V @ 250µA Vgs(th) (Max) @ Id
100 nC @ 10 V Gate Charge (Qg) (Max) @ Vgs
2930 pF @ 25 V Input Capacitance (Ciss) (Max) @ Vds
140W (Tc) Power Dissipation (Max)
Surface Mount Mounting Type