Intel IPSR-QDR

许可证

Overview

IPT020N10N3ATMA1 with pin details, that includes Reel Packaging, they are designed to operate with a IPT020N10N3 SP001100160 Part Aliases, Mounting Style is shown on datasheet note for use in a SMD/SMT, that offers Tradename features such as OptiMOS, Package Case is designed to work in HSOF-8, as well as the Si Technology, the device can also be used as Single Configuration. In addition, the Pd Power Dissipation is 300 W, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and Fall Time is 37 ns, and the Rise Time is 17 ns, and Vgs Gate Source Voltage is +/- 20 V, and the Id Continuous Drain Current is 300 A, and Vds Drain Source Breakdown Voltage is 100 V, and the Vgs th Gate Source Threshold Voltage is 2.2 V, and Rds On Drain Source Resistance is 440 mOhms, and the Transistor Polarity is N-Channel, and Typical Turn Off Delay Time is 149 ns, and the Typical Turn On Delay Time is 30 ns, and Qg Gate Charge is 252 nC, and the Forward Transconductance Min is 320 S, and Channel Mode is Enhancement.

IPT059N15N3ATMA1 with EDA / CAD Models, that includes Si Technology, they are designed to operate with a Reel Packaging, Tradename is shown on datasheet note for use in a OptiMOS, that offers Part Aliases features such as IPT059N15N3 SP001100162, Package Case is designed to work in HSOF-8.

Features