IDT 6116SA35TP

2K x 835 ns0°C ~ 70°C（TA）

Overview

The 6116SA35TP 5V CMOS SRAM is organized as 2K x 8. The 6116SA35TP offers a reduced power standby mode.The low-power (LA) version also offers a battery backup data retention capability where the circuit typically consumes only 1μW to 4μW operating off a 2V battery. All inputs and outputs are TTL-compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available.

Features

Bulk Package
Volatile Memory Type
SRAM Memory Format
16Kbit Memory Size
2K x 8 Memory Organization
Parallel Memory Interface
35ns Write Cycle Time - Word, Page
35 ns Access Time
4.5V ~ 5.5V Voltage - Supply
0°C ~ 70°C (TA) Operating Temperature
Through Hole Mounting Type