IDT 6116LA20SO

2K x 820 ns0°C ~ 70°C（TA）

Overview

The 6116LA20SOG 5V CMOS SRAM is organized as 2K x 8. The 6116LA20SOG offers a reduced power standby mode.The low-power (LA) version also offers a battery backup data retention capability where the circuit typically consumes only 1μW to 4μW operating off a 2V battery. All inputs and outputs are TTL-compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available.

Features

Bulk Package
Volatile Memory Type
SRAM Memory Format
16Kbit Memory Size
2K x 8 Memory Organization
Parallel Memory Interface
20ns Write Cycle Time - Word, Page
20 ns Access Time
4.5V ~ 5.5V Voltage - Supply
0°C ~ 70°C (TA) Operating Temperature
Surface Mount Mounting Type