Overview
The HMC414MS8G(E) is a high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifier which operates between 2.2 and 2.8 GHz. The amplifier is packaged in a low cost, surface mount 8 leaded package with an exposed base for improved RF and thermal performance. With a minimum of external components, the amplifier provides 20 dB of gain, +30 dBm of saturated power at 32% PAE from a +5V supply voltage. The amplifier can also operate with a 3.6V supply. Vpd can be used for full power down or RF output power/ current control.
Features
Bulk Package
NARROW BAND MEDIUM POWER RF/Microwave Amplifier
RF Type Bluetooth
2.75V~5V voltage
300mA current
Surface Mount Mounting Type
Applications
There are a lot of Analog Devices Inc.
HMC414MS8G RF Amplifiers applications.
- Personal Navigation Device (PND)
- Cellular Phones with GPS
- Notebook PC
- Ultra-Mobile PC
- Recreational
- Marine Navigation
- Avionics
- GPS
- GLONASS
- BeiDou