Hittite HMC413QS16GETR

1.6GHz ~ 2.2GHz27dBm23dB5.5dB2.75V ~ 5V

Overview

The HMC413QS16G(E) is a high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifier which operates between 1.6 and 2.2 GHz. The amplifier is packaged in a low cost, surface mount 16 leaded package with an exposed base for improved RF and thermal performance. With a minimum of external components, the amplifier provides 23 dB of gain, +29.5 dBm of saturated power at 42% PAE from a +5V supply voltage. The amplifi er can also operate with a 3.6V supply. Vpd can be used for full power down or RF output power/current control.

Features

Bulk Package
NARROW BAND MEDIUM POWER RF/Microwave Amplifier
RF Type Cellular
2.75V~5V voltage
16 pins

Surface Mount Mounting Type

Applications

There are a lot of Analog Devices Inc.
HMC413QS16GETR RF Amplifiers applications.

• GPS
• GLONASS
• BeiDou
• Galileo
• Wireless communications
• ISM applications
• Wireless infrastructure
• Automated test equipment
• RF/IF gain control
• Microwave Radios