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GD5F4GM8UEYIGR

GigaDevice GD5F4GM8UEYIGR

1G×47纳秒-40°C ~ 85°C (TA)

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GD5F4GM8UEYIGR
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¥25.75

价格更新:一个月前

博斯克质量保证

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产品详情

Overview

GigaDevice GD5F4GQ4UCYIG 4Gb SPI NAND Flash 2.7V-3.6V WSON8 (8*6mm) productss benefit the user with the low cost per bit and high densities (capacities) of SLC NAND Flash, while maintaining all the advantages of SPI NOR Flash.   Until recently, these applications have been in a “no man’s land” for non-volatile IC memory solutions. Now GigaDevice Semiconductor offers a perfect solution to designers of these applications with adequate density as well as an efficient interface. The solution is SPI NAND Flash.       For the first time, designers of electronic systems have a solution for non-volatile IC memory applications that require:1Gbit to 4Gbit Flash capacityLow-cost, convenient SPI accessSmall physical sizeHigh-reliabilityTypical “embedded” markets that require significant amounts of non-volatile memory are:Smart WatchesBiometric “wearable” consumer/medical productsSmart Televisions/DisplaysSet-Top Boxes for Cable or Satellite ReceiversWi-Fi and Network Access Ports

Features

GD5F Series
Tape & Reel (TR) Package
FLASH Memory Format
4Gbit Memory Size
1G x 4 Memory Organization
133 MHz Clock Frequency
600µs Write Cycle Time - Word, Page
7 ns Access Time
2.7V ~ 3.6V Voltage - Supply
Surface Mount Mounting Type
产品属性
全选
型号系列: GD5F
包装: 磁带
部件状态: 在售
存储器类型: 非挥发性
存储器格式: 闪光
技术: 闪存 - NAND (SLC)
存储容量: 4G比特
存储器组织: 1G×4
存储器接口: SPI - 四路 I/O、DTR
时钟频率: 133兆赫
单词、页面的写入周期时间: 600微秒
访问时间: 7纳秒
电源电压: 2.7V~3.6V
工作温度: -40°C ~ 85°C (TA)
安装类型: 表面贴装
封装/外壳: 8-WDFN 裸露焊盘
供应商器件封装: 8-WSON (6x8)
GigaDevice Semiconductor (HK) Limited

GigaDevice Semiconductor (HK) Limited

GigaDevice Semiconductor是一家专注于存储器解决方案和微控制器的半导体公司,总部位于中国北京,并在香港设有分支机构。公司提供广泛的NOR闪存、NAND闪存和微控制器产品。

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博斯克数字

收入: 85M

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配件发货: 25M+

我们在过去的五年中发货了2.5亿个配件,比前五年增长148%。

制造商: 950

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