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MRFG35005NT1

Freescale MRFG35005NT1

pHEMT FET1.8GHz ~ 3.6GHz11dB12 V1.7A80 mA450mW

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MRFG35005NT1
RF S BAND, GALLIUM ARSENIDE, N-C
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¥153.50

价格更新:一个月前

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产品详情

Overview

The MRFG35005ANT1 is TRANSISTOR RF 4.5W 12V PLD-1.5, that includes MRFG35005ANT1 Series, they are designed to operate with a Reel Packaging, Unit Weight is shown on datasheet note for use in a 0.009877 oz, that offers Mounting Style features such as SMD/SMT, Package Case is designed to work in PLD-1.5, as well as the GaAs Technology, the device can also be used as Single Dual Source Configuration. In addition, the Transistor Type is pHEMT, the device is offered in 11 dB Gain, it has an Maximum Operating Temperature range of + 85 C, it has an Minimum Operating Temperature range of - 40 C, and the Operating Frequency is 3.55 GHz, and Id Continuous Drain Current is 1.7 A, and the Vds Drain Source Breakdown Voltage is 15 V, and Vgs Gate Source Breakdown Voltage is - 5 V, and the P1dB Compression Point is 4.5 W.

The MRFG35005MT1 is MOSFET RF 3.5GHZ 4.5W 12V 1.5PLD manufactured by FREESCALE. The MRFG35005MT1 is available in PLD-1.5 Package, is part of the RF FETs, , and with support for MOSFET RF 3.5GHZ 4.5W 12V 1.5PLD, RF Mosfet pHEMT FET 12V 80mA 3.55GHz 11dB 4.5W PLD-1.5.

Features

Bulk Package
pHEMT FET Technology
1.8GHz ~ 3.6GHz Frequency
11dB Gain
12 V Voltage - Test
1.7A Current Rating (Amps)
80 mA Current - Test
450mW Power - Output
15 V Voltage - Rated
Surface Mount Mounting Type
产品属性
全选
包装: 散装
部件状态: 在售
技术: pHEMT FET
频率: 1.8GHz ~ 3.6GHz
增益: 11dB
测试电压: 12 V
额定电流(安培): 1.7A
电流 - 测试: 80 mA
输出功率: 450mW
额定电压: 15 V
封装/外壳: PLD-1.5
供应商器件封装: PLD-1.5
安装类型: 表面贴装型
Freescale Semiconductor

Freescale Semiconductor

Freescale Semiconductor是一家全球领先的嵌入式处理器解决方案提供商,成立于2004年,由摩托罗拉半导体部门分拆而成,总部位于美国德克萨斯州奥斯汀。2015年,Freescale被NXP Semiconductors收购。

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