Fairchild NDC7002N_SB9G007

MOSFET（金属氧化物）逻辑电平门2 N-通道（双）50V510mA2 欧姆 @ 510mA，10V2.5V @ 250µA

Overview

Enhancement Mode Field Effect Transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

Features

Tape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
Logic Level Gate FET Feature
50V Drain to Source Voltage (Vdss)
510mA Current - Continuous Drain (Id) @ 25°C
2Ohm @ 510mA, 10V Rds On (Max) @ Id, Vgs
2.5V @ 250µA Vgs(th) (Max) @ Id
1nC @ 10V Gate Charge (Qg) (Max) @ Vgs
20pF @ 25V Input Capacitance (Ciss) (Max) @ Vds
700mW Power - Max
Surface Mount Mounting Type