联系我们
中文
NDB603AL

Fairchild NDB603AL

N 通道30 V25A(Tc)3V @ 250µA50W(Tc)-65°C ~ 175°C(TJ)表面贴装型

比较
NDB603AL
MOSFET N-CH 30V 25A D2PAK
paypalvisamastercarddiscover
upsdhlsf
比较

面议

价格更新:一个月前

博斯克质量保证

912ob9001 201514001 201545001 201813485 2016esdduns
产品详情

Overview

The NDB6030PL is MOSFET P-CH 30V 30A D2PAK, that includes Reel Packaging, they are designed to operate with a NDB6030PL_NL Part Aliases, Unit Weight is shown on datasheet note for use in a 0.046296 oz, that offers Mounting Style features such as SMD/SMT, Package Case is designed to work in TO-252-3, as well as the Si Technology, the device can also be used as 1 Channel Number of Channels. In addition, the Configuration is Single, the device is offered in 1 P-Channel Transistor Type, the device has a 75 W of Pd Power Dissipation, it has an Maximum Operating Temperature range of + 175 C, it has an Minimum Operating Temperature range of - 65 C, and Fall Time is 52 ns, and the Rise Time is 60 ns, and Vgs Gate Source Voltage is 16 V, and the Id Continuous Drain Current is - 30 A, and Vds Drain Source Breakdown Voltage is - 30 V, and the Rds On Drain Source Resistance is 37 mOhms, and Transistor Polarity is P-Channel, and the Typical Turn Off Delay Time is 50 ns, and Typical Turn On Delay Time is 12.5 ns, and the Channel Mode is Enhancement.

NDB6030PL_NL with circuit diagram manufactured by FAIRCHIL. The NDB6030PL_NL is available in TO-263 Package, is part of the IC Chips.

Features

Tape & Reel (TR) Package


  • 25A, 30 V. RDS(ON) = 0.022? @ VGS = 10 V

  • Critical DC electrical parameters are specified at elevated temperatures.

  • The rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.

  • High-density cell design for extremely low RDS(ON)

  • 175°C maximum junction temperature rating.



Surface Mount Mounting Type

Applications


  • Cellular phones 

  • Laptop computers

  • Photovoltaic systems 

  • Wind turbines

  • Shunt voltage regulator and the series voltage regulator


产品属性
全选
包装: 卷带(TR)
部件状态: 停产
FET 类型: N 通道
技术: MOSFET(金属氧化物)
漏源电压(Vdss): 30 V
25°C 时电流 - 连续漏极 (Id): 25A(Tc)
最大驱动电压(Rds 开启),最小驱动电压(Rds 开启): 4.5V,10V
漏极电流和栅极至源极电压下的最大导通电阻: 22 毫欧 @ 25A,10V
漏极电流下的最大栅极阈值电压: 3V @ 250µA
最大栅极电荷 (Qg) @ Vgs: 40 nC @ 10 V
最大栅极源电压: ±20V
Vds 时的最大输入电容 (Ciss): 1100 pF @ 15 V
最大功率耗散: 50W(Tc)
工作温度: -65°C ~ 175°C(TJ)
安装类型: 表面贴装型
供应商器件封装: D²PAK(TO-263)
封装/外壳: TO-263-3,D²Pak(2 引线 + 接片),TO-263AB
Fairchild Semiconductor

Fairchild Semiconductor

Fairchild Semiconductor是一家领先的半导体公司,成立于1957年,总部位于美国加利福尼亚州圣何塞。公司专注于电源管理和模拟半导体解决方案,2016年被ON Semiconductor收购。

实时新闻

博斯克数字

收入: 85M

2022年的收入为8500万美元,与2021年增长63%。

国家: 105

博斯克服务全球105个国家的客户。

配件发货: 25M+

我们在过去的五年中发货了2.5亿个配件,比前五年增长148%。

制造商: 950

2022年,博斯克从近950个制造商售卖了配件。

所有产品零件号 0 - Z