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FJN4301RTA

Fairchild FJN4301RTA

PNP - 预偏压100 mA50 V

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FJN4301RTA
0.1A, 50V, PNP, TO-92
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¥1.43

价格更新:一个月前

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产品详情

Overview

The FJN3305RTA is TRANS PREBIAS NPN 300MW TO92-3, that includes Ammo Pack Packaging, they are designed to operate with a 0.008466 oz Unit Weight, Mounting Style is shown on datasheet note for use in a Through Hole, that offers Package Case features such as TO-92-3 Kinked Lead, Configuration is designed to work in Single, as well as the 0.3 W Pd Power Dissipation, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, the device is offered in 50 V Collector Emitter Voltage VCEO Max, the device has a NPN of Transistor Polarity, and Emitter Base Voltage VEBO is 10 V, and the Continuous Collector Current is 0.1 A, and DC Collector Base Gain hfe Min is 30, and the Typical Input Resistor is 4.7 kOhms, and Typical Resistor Ratio is 0.47, and the Peak DC Collector Current is 100 mA.

FJN3313R with circuit diagram manufactured by FAILCHILD. The FJN3313R is available in TO-92 Package, is part of the Transistors (BJT) - Single, Pre-Biased.

Features

Bulk Package
100 mA Current - Collector (Ic) (Max)
50 V Voltage - Collector Emitter Breakdown (Max)
4.7 kOhms Resistor - Base (R1)
4.7 kOhms Resistor - Emitter Base (R2)
20 @ 10mA, 5V DC Current Gain (hFE) (Min) @ Ic, Vce
300mV @ 500µA, 10mA Vce Saturation (Max) @ Ib, Ic
100nA (ICBO) Current - Collector Cutoff (Max)
200 MHz Frequency - Transition
300 mW Power - Max
Through Hole Mounting Type
产品属性
全选
包装: 散装
部件状态: 在售
晶体管类型: PNP - 预偏压
集电极电流 (Ic)(最大值): 100 mA
最大集电极-发射极击穿电压: 50 V
基极电阻器 (R1): 4.7 kOhms
发射器基极电阻器 (R2): 4.7 kOhms
直流电流增益 (hFE) 最小值 @ Ic、Vce: 20 @ 10mA,5V
基极电流和集电极电流下的最大集电极-发射极饱和电压: 300mV @ 500µA,10mA
电流 - 集电极截止(最大值): 100nA(ICBO)
频率 - 跃迁: 200 MHz
最大功率: 300 mW
安装类型: 通孔
封装/外壳: TO-226-3,TO-92-3(TO-226AA)成形引线
供应商器件封装: TO-92-3
Fairchild Semiconductor

Fairchild Semiconductor

Fairchild Semiconductor是一家领先的半导体公司,成立于1957年,总部位于美国加利福尼亚州圣何塞。公司专注于电源管理和模拟半导体解决方案,2016年被ON Semiconductor收购。

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