Fairchild FDC653N

N 通道30 V5A（Ta）2V @ 250µA1.6W（Ta）-55°C ~ 150°C（TJ）表面贴装型

Overview

Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

Features

Bulk Package
MOSFET (Metal Oxide) Technology
30 V Drain to Source Voltage (Vdss)
5A (Ta) Current - Continuous Drain (Id) @ 25°C
4.5V, 10V Drive Voltage (Max Rds On, Min Rds On)
35mOhm @ 5A, 10V Rds On (Max) @ Id, Vgs
2V @ 250µA Vgs(th) (Max) @ Id
17 nC @ 10 V Gate Charge (Qg) (Max) @ Vgs
±20V Vgs (Max)
350 pF @ 15 V Input Capacitance (Ciss) (Max) @ Vds
1.6W (Ta) Power Dissipation (Max)
Surface Mount Mounting Type