Cypress S34MS04G100BHI000

512M x 845 ns-40°C ~ 85°C（TA）

Overview

The S34MS04G100BHI000 is a 4GB SLC NAND Flash Memory for embedded. It is offered in 1.8VCC and VCCQ power supply and with x8 I/O interface. The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased. The page size for x8 (2048 + 64 spare) bytes. Each block can be programmed and erased up to 100000 cycles with ECC (error correction code) on. To extend the lifetime of NAND flash devices, the implementation of an ECC is mandatory. The chip supports CE# don't care function. This function allows the direct download of the code from the NAND flash memory device by a microcontroller, since the CE# transitions do not stop the read operation. The device has a read cache feature that improves the read throughput for large files. During cache reading, the devices load the data in a cache register while the previous data is transferred to the I/O buffers to be read.

Features

FLASH Memory Format
Package / Case: 63-VFBGA
63 Pins
Operating Supply Voltage:1.8V

Surface Mount Mounting Type

Applications

There are a lot of Cypress Semiconductor Corp
S34MS04G100BHI000 Memory applications.

• personal computers
• servers
• supercomputers
• telecommunications
• workstations,
• DVD disk buffer
• data buffer
• nonvolatile BIOS memory
• Camcorders
• embedded logic