Cypress S25HL512TFANHI010

64M x 8-40°C ~ 85°C（TA）

Overview

The S25G is DIODE GEN PURP 400V 25A DO203AA, that includes S25 Series, they are designed to operate with a Standard Recovery Rectifiers Product, Packaging is shown on datasheet note for use in a Bulk, that offers Unit Weight features such as 0.246918 oz, Mounting Style is designed to work in Through Hole, as well as the DO-203AA, DO-4, Stud Package Case, the device can also be used as Chassis, Stud Mount Mounting Type. In addition, the Speed is Standard Recovery >500ns, > 200mA (Io), the device is offered in Standard Diode Type, the device has a 10μA @ 50V of Current Reverse Leakage Vr, and Voltage Forward Vf Max If is 1.1V @ 25A, and the Voltage DC Reverse Vr Max is 400V, and Current Average Rectified Io is 25A, it has an Operating Temperature Junction range of -65°C ~ 175°C, and Vf Forward Voltage is 1.1 V, and the Vr Reverse Voltage is 400 V, and Ir Reverse Current is 10 uA, and the If Forward Current is 25 A, and Max Surge Current is 373 A.

The S25FS512SDSNFV013 is Flash Memory manufactured by Cypress. is part of the Memory, , and with support for Flash Memory, FLASH - NOR Memory IC 512Mb (64M x 8) SPI - Quad I/O, QPI 80MHz, NOR Flash Serial-SPI 1.8V 512M-bit 512M/256M/128M x 1/2-bit/4-bit 8ns 8-Pin WSON EP T/R.

Features

FLASH Memory Format
Package / Case: 8-WDFN Exposed Pad

Surface Mount Mounting Type

Applications

There are a lot of Cypress Semiconductor Corp
S25HL512TFANHI010 Memory applications.

• cell phones
• eSRAM
• mainframes
• multimedia computers
• networking
• personal computers
• servers
• supercomputers
• telecommunications
• workstations,