Cypress FM24V10-G

128K x 8130 ns-40°C ~ 85°C（TA）

Overview

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.

Nonvolatile Ferroelectric RAM MemoryFast write speedHigh enduranceLow power consumption

Features

FRAM Memory Format
Package / Case: 8-SOIC (0.154, 3.90mm Width)
8 Pins
Operating Supply Voltage:3.3V

Surface Mount Mounting Type

Applications

There are a lot of Cypress Semiconductor Corp
FM24V10-G Memory applications.

• cell phones
• eSRAM
• mainframes
• multimedia computers
• networking
• personal computers
• servers
• supercomputers
• telecommunications
• workstations,