Overview
• Automatic power-down when deselected• CMOS for optimum speed/power• High speed — 15 ns• Low active power — 660 mW (commercial) — 688 mW (military—20 ns)• Low standby power — 110 mW (20 ns)• TTL-compatible inputs and outputs• Capable of withstanding greater than 2001V electrostatic discharge• VIH of 2.2V
Features
Tube Package
Volatile Memory Type
SRAM Memory Format
16Kbit Memory Size
2K x 8 Memory Organization
Parallel Memory Interface
25ns Write Cycle Time - Word, Page
25 ns Access Time
4.5V ~ 5.5V Voltage - Supply
0°C ~ 70°C (TA) Operating Temperature
Surface Mount Mounting Type