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CY62146ELL-45ZSXI

Cypress CY62146ELL-45ZSXI

256K x 1645 ns-40°C ~ 85°C(TA)

比较
CY62146ELL-45ZSXI
STANDARD SRAM, 256KX16, 45NS, CM
无数据表
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¥35.72

价格更新:一个月前

博斯克质量保证

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产品详情

Overview

Functional Description[1] The CY62146E is a high performance CMOS static RAM organized as 256K words by 16 bits. This device features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power down feature that reduces power consumption when addresses are not toggling. Placing the device into standby mode reduces power consumption by more than 99% when deselected (CE HIGH). The input and output pins (IO0 through IO15) are placed in a high impedance state when: • Deselected (CE HIGH) • Outputs are disabled (OE HIGH) • Both byte high enable and byte low enable are disabled (BHE, BLE HIGH) • When the write operation is active (CE LOW and WE LOW) To write to the device, take Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from IO pins (IO0 through IO7) is written into the location specified on the address pins (A0 through A17). If Byte High Enable (BHE) is LOW, then data from IO pins (IO8 through IO15) is written into the location specified on the address pins (A0 through A17). To read from the device, take Chip Enable (CE) and Output Enable (OE) LOW while forcing the Write Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW, then data from the memory location specified by the address pins appears on IO0 to IO7. If Byte High Enable (BHE) is LOW, then data from memory appears on IO8 to IO15. See the “Truth Table” on page 9 for a complete description of read and write modes.

Features

MoBL® Series
Package / Case: 44-TSOP (0.400, 10.16mm Width)
44 Pins
Operating Supply Voltage:5V
I/O Type: COMMON
Freguency at 1MHz
1MHz terminals

Surface Mount Mounting Type

Applications


There are a lot of Cypress Semiconductor Corp
CY62146ELL-45ZSXI Memory applications.

  • Cache memory
  • cell phones
  • eSRAM
  • mainframes
  • multimedia computers
  • networking
  • personal computers
  • servers
  • supercomputers
  • telecommunications
产品属性
全选
型号系列: MoBL®
包装: 散装
部件状态: 在售
内存类型: 易失
内存格式: SRAM
技术: SRAM - 异步
内存大小: 4Mb
内存组织: 256K x 16
内存接口: 并联
单词、页面的写入周期时间: 45ns
访问时间: 45 ns
电源电压: 4.5V ~ 5.5V
工作温度: -40°C ~ 85°C(TA)
安装类型: 表面贴装型
包装 / 盒: 44-TSOP(0.400",10.16mm 宽)
供应商 设备封装: 44-TSOP II
Cypress Semiconductor Corp

Cypress Semiconductor Corp

Cypress Semiconductor是一家知名的半导体公司,专注于高性能嵌入式系统解决方案。公司成立于1982年,总部位于美国加利福尼亚州圣何塞。Cypress的产品广泛应用于汽车、工业、消费电子和物联网市场。

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