Broadcom ATF-55143-BLKG

E-pHEMT2GHz17.7dB2.7 V100mA0.6dB10 mA14.4dBm

Overview

The ATF-541M4-TR2 is RF JFET Transistors Transistor GaAs Single Voltage, that includes Reel Packaging, they are designed to operate with a SMD/SMT Mounting Style, Package Case is shown on datasheet note for use in a Mini PAK, that offers Technology features such as GaAs, Configuration is designed to work in Single Dual Source, as well as the EpHEMT Transistor Type, the device can also be used as 17.5 dB Gain. In addition, the Pd Power Dissipation is 360 mW, it has an Maximum Operating Temperature range of + 150 C, the device has a 2 GHz of Operating Frequency, and Id Continuous Drain Current is 120 mA, and the Vds Drain Source Breakdown Voltage is 5 V, and Transistor Polarity is N-Channel, and the Forward Transconductance Min is 398 mmho, and Vgs Gate Source Breakdown Voltage is - 5 V to 1 V, and the NF Noise Figure is 0.5 dB, and P1dB Compression Point is 21.4 dBm.

ATF-55143 with circuit diagram manufactured by AVAGO. The ATF-55143 is available in SOT-343 Package, is part of the RF FETs.

Features

Strip Package
2GHz Frequency
17.7dB Gain
2.7 V Voltage - Test
100mA Current Rating (Amps)
0.6dB Noise Figure
10 mA Current - Test
14.4dBm Power - Output
5 V Voltage - Rated