Broadcom ATF-36077-TR1

pHEMT FET12GHz12dB1.5 V45mA0.5dB10 mA5dBm

Overview

The ATF-35143-TR2G is RF JFET Transistors Transistor GaAs Low Noise, that includes Reel Packaging, they are designed to operate with a SMD/SMT Mounting Style, Package Case is shown on datasheet note for use in a SOT-343, that offers Technology features such as GaAs, Configuration is designed to work in Single Dual Source, as well as the pHEMT Transistor Type, the device can also be used as 18 dB Gain. In addition, the Pd Power Dissipation is 300 mW, it has an Maximum Operating Temperature range of + 160 C, the device has a 2 GHz of Operating Frequency, and Id Continuous Drain Current is 80 mA, and the Vds Drain Source Breakdown Voltage is 5.5 V, and Transistor Polarity is N-Channel, and the Forward Transconductance Min is 120 mmho, and Vgs Gate Source Breakdown Voltage is - 5 V, and the NF Noise Figure is 0.4 dB, and P1dB Compression Point is 11 dBm.

ATF-36077 with EDA / CAD Models manufactured by Agilent. The ATF-36077 is available in RAM Package, is part of the RF FETs.

Features

Tape & Reel (TR) Package
pHEMT FET Technology
12GHz Frequency
12dB Gain
1.5 V Voltage - Test
45mA Current Rating (Amps)
0.5dB Noise Figure
10 mA Current - Test
5dBm Power - Output
3 V Voltage - Rated
77 Supplier Device Package