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AT-42035G

Broadcom AT-42035G

NPN12V8GHz

比较
AT-42035G
RF TRANS NPN 12V 8GHZ 35 MICRO X
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¥533.50

价格更新:一个月前

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产品详情

Overview

The AT-42010-TR1 is TRANS NPN BIPO 12V 80MA 100-SMD, that includes Bulk Packaging, they are designed to operate with a 4-SMD (100 mil) Package Case, Mounting Type is shown on datasheet note for use in a Surface Mount, that offers Power Max features such as 600mW, Transistor Type is designed to work in NPN, as well as the 80mA Current Collector Ic Max, the device can also be used as 12V Voltage Collector Emitter Breakdown Max. In addition, the DC Current Gain hFE Min Ic Vce is 30 @ 35mA, 8V, the device is offered in 8GHz Frequency Transition, the device has a 1.9dB ~ 3dB @ 2GHz ~ 4GHz of Noise Figure dB Typ f, and Gain is 10dB ~ 13.5dB.

The AT42010 is TRANS NPN BIPO 12V 80MA 100-SMD manufactured by ATMEL. The AT42010 is available in 4-SMD (100 mil) Package, is part of the RF Transistors (BJT), , and with support for TRANS NPN BIPO 12V 80MA 100-SMD.

Features

Bulk Package
NPN Transistor Type
12V Voltage - Collector Emitter Breakdown (Max)
8GHz Frequency - Transition
2dB ~ 3dB @ 2GHz ~ 4GHz Noise Figure (dB Typ @ f)
10dB ~ 13.5dB Gain
600mW Power - Max
30 @ 35mA, 8V DC Current Gain (hFE) (Min) @ Ic, Vce
80mA Current - Collector (Ic) (Max)
150°C (TJ) Operating Temperature
Surface Mount Mounting Type
产品属性
全选
包装: 散装
部件状态: 停产
晶体管类型: NPN
最大集电极-发射极击穿电压: 12V
频率 - 跃迁: 8GHz
噪声系数(频率时的典型 dB): 2dB ~ 3dB @ 2GHz ~ 4GHz
增益: 10dB ~ 13.5dB
最大功率: 600mW
直流电流增益 (hFE) 最小值 @ Ic、Vce: 30 @ 35mA,8V
集电极电流 (Ic)(最大值): 80mA
工作温度: 150°C(TJ)
安装类型: 表面贴装型
封装/外壳: 4-SMD(35 micro-X)
供应商器件封装: 35 micro-X
Broadcom Limited

Broadcom Limited

Broadcom Limited是一家全球领先的半导体公司,专注于设计、开发和供应广泛的半导体和基础设施软件解决方案。公司总部位于美国加利福尼亚州圣何塞

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