Atmel APT25GP90BDQ1G

900 V72 A370µJ（关）-55°C ~ 150°C（TJ）TO-247-3

Overview

The APT25GP120BG is IGBT 1200V 69A 417W TO247, that includes POWER MOS 7R Series, they are designed to operate with a Tube Packaging, Package Case is shown on datasheet note for use in a TO-247-3, that offers Input Type features such as Standard, Mounting Type is designed to work in Through Hole, as well as the TO-247 [B] Supplier Device Package, the device can also be used as 417W Power Max. In addition, the Current Collector Ic Max is 69A, the device is offered in 1200V Voltage Collector Emitter Breakdown Max, the device has a PT of IGBT Type, and Current Collector Pulsed Icm is 90A, and the Vce on Max Vge Ic is 3.9V @ 15V, 25A, and Switching Energy is 500μJ (on), 438μJ (off), and the Gate Charge is 110nC, and Td on off 25°C is 12ns/70ns, and the Test Condition is 600V, 25A, 5 Ohm, 15V.

APT25GP90BDQ1 with circuit diagram manufactured by APT. The APT25GP90BDQ1 is available in TO-247 Package, is part of the Module.

Features

POWER MOS 7® Series
Tube Package
PT IGBT Type
900 V Voltage - Collector Emitter Breakdown (Max)
72 A Current - Collector (Ic) (Max)
110 A Current - Collector Pulsed (Icm)
3.9V @ 15V, 25A Vce(on) (Max) @ Vge, Ic
417 W Power - Max
370µJ (off) Switching Energy
Standard Input Type
110 nC Gate Charge
13ns/55ns Td (on/off) @ 25°C
600V, 40A, 4.3Ohm, 15V Test Condition
Through Hole Mounting Type