Atmel 2N2609

30 V10 mATO-206AA，TO-18-3 金属罐

Overview

The 2N2608 is JFET JFET P-Channel, that includes 2N2608 Series, they are designed to operate with a Reel Packaging, Mounting Style is shown on datasheet note for use in a Through Hole, that offers Package Case features such as TO-18-3, Technology is designed to work in Si, as well as the Single Configuration, the device can also be used as 300 mW Pd Power Dissipation. In addition, the Id Continuous Drain Current is 5 mA, the device is offered in - 10 V Vds Drain Source Breakdown Voltage, the device has a P-Channel of Transistor Polarity, and Forward Transconductance Min is 1 mS, and the Vgs Gate Source Breakdown Voltage is - 30 V, and Drain to Source Voltage Vdss is - 4.5 mA, and the Gate Source Cutoff Voltage is 4 V.

The 2N2604 is Bipolar Transistors - BJT PNP Transistor, that includes Through Hole Mounting Style, they are designed to operate with a TO-46 Package Case.

Features

Bag Package
30 V Voltage - Breakdown (V(BR)GSS)
2 mA @ 5 V Current - Drain (Idss) @ Vds (Vgs=0)
10 mA Current Drain (Id) - Max
750 mV @ 1 A Voltage - Cutoff (VGS off) @ Id
10pF @ 5V Input Capacitance (Ciss) (Max) @ Vds
300 mW Power - Max
Through Hole Mounting Type