AMD AM29LV160DB-70EC

2M×8、1M×1670纳秒0℃～70℃

Overview

The Am29LV160D is a 16 Mbit, 3.0 Volt-only Flash memory organized as 2,097,152 bytes or 1,048,576 words. The device is offered in 48-ball FBGA, 44-pin SO, and 48-pin TSOP packages. The word-wide data (x16) appears on DQ15–DQ0; the byte-wide (x8) data appears on DQ7–DQ0. This device is designed to be programmed in-system with the standard system 3.0 volt VCC supply. A 12.0 V VPP or 5.0 VCC are not required for write or erase operations. The device can also be programmed in standard EPROM programmers.

DISTINCTIVE CHARACTERISTICS■ Single power supply operation   — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications   — Regulated voltage range: 3.0 to 3.6 volt read and write operations and for compatibility       with high performance 3.3 volt microprocessors■ Manufactured on 0.23 µm process technology   — Fully compatible with 0.32 µm Am29LV160B device■ High performance   — Access times as fast as 70 ns■ Ultra low power consumption (typical values at 5 MHz)   — 200 nA Automatic Sleep mode current   — 200 nA standby mode current   — 9 mA read current   — 20 mA program/erase current■ Flexible sector architecture   — One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and thirty-one 64 Kbyte sectors (byte mode)   — One 8 Kword, two 4 Kword, one 16 Kword, and thirty-one 32 Kword sectors (word mode)   — Supports full chip erase   — Sector Protection :   — A hardware method of locking a sector to prevent any program or erase operations within that sector   — Sectors can be locked in-system or via programming equipment Temporary Sector Unprotect feature allows code changes in previously locked sectors■ Unlock Bypass Program Command   — Reduces overall programming time when issuing multiple program command sequences■ Top or bottom boot block configurations available■ Embedded Algorithms   — Embedded Erase algorithm automatically preprograms and erases the entire chip or any combination of designated sectors   — Embedded Program algorithm automatically writes and verifies data at specified addresses■ Minimum 1,000,000 write cycle guarantee per sector■ 20-year data retention at 125°C   — Reliable operation for the life of the system■ Package option   — 48-ball FBGA   — 48-pin TSOP   — 44-pin SO■ CFI (Common Flash Interface) compliant   — Provides device-specific information to the system, allowing host software to easily reconfigure for different Flash devices■ Compatibility with JEDEC standards   — Pinout and software compatible with single power supply Flash   — Superior inadvertent write protection■ Data# Polling and toggle bits   — Provides a software method of detecting program or erase operation completion■ Ready/Busy# pin (RY/BY#)   — Provides a hardware method of detecting program or erase cycle completion (not available on 44-pin SO)■ Erase Suspend/Erase Resume   — Suspends an erase operation to read data from, or program data to, a sector that is not being erased, then resumes the erase operation■ Hardware reset pin (RESET#)   — Hardware method to reset the device to reading array data

Features

Tray Package
FLASH Memory Format
16Mbit Memory Size
2M x 8, 1M x 16 Memory Organization
Parallel Memory Interface
70ns Write Cycle Time - Word, Page
70 ns Access Time
3V Voltage - Supply
0°C ~ 70°C Operating Temperature
Surface Mount Mounting Type